Key Features: Type: NPN BJT (Bipolar Junction Transistor). Package: SMD SOT-23. Collector-Emitter Voltage (Vceo): 25V. Collector Current (Ic): 500mA (maximum). Power Dissipation: 300mW. Typical Applications: Low-power amplifiers, switching circuits, and LED drivers. DC Gain (hFE): Can reach 400, but typically around 110. Detailed Specifications: Collector-Base Voltage (Vcbo): 40V. Emitter-Base Voltage (Vebo): 5V. Maximum Collector Power Dissipation (Pc): 1.3W (at 25°C). Transition Frequency (ft): 200MHz. Operating Temperature: -55°C to 150°C.
