Detailed Specifications:- Number of Channels 1 Channel Transistor Polarity N-Channel Drain-Source Breakdown Voltage (Vds) 55V Continuous Drain Current (Id) 110A Drain-Source Resistance (Rds On) 8mOhms Gate-Source Voltage (Vgs) 20V Gate Charge (Qg) 146 nC Operating Temperature Range -55 – 175°C Power Dissipation (Pd) 200W




