ype Designator: 18N50 Type of Transistor: MOSFET Type of Control Channel: N-Channel Absolute Maximum Ratings Pd ⓘ – Maximum Power Dissipation: 277 W |Vds|ⓘ – Maximum Drain-Source Voltage: 500 V |Vgs|ⓘ – Maximum Gate-Source Voltage: 30 V |Id| ⓘ – Maximum Drain Current: 18 A Tj ⓘ – Maximum Junction Temperature: 150 °C Electrical Characteristics |VGSth|ⓘ – Maximum Gate-Threshold Voltage: 4 V Qg ⓘ – Total Gate Charge: 45 nC tr ⓘ – Rise Time: 165 nS Cossⓘ – Output Capacitance: 330 pF RDSonⓘ – Maximum Drain-Source On-State Resistance: 0.24 Ohm




